US memory maker; competes with SK hynix and Samsung in DRAM, NAND and HBM.
Micron signed Strategic Customer Agreements on July 16 with seven automotive players — Qualcomm, Samsung's Harman, Hyundai Mobis, Visteon, DENSO, Astemo and JOYNEXT — locking in memory and storage supply and pricing for AI vehicle platforms over three to five years.
Micron boosted its planned US investment to more than $250B through 2035 and poured first concrete at its Clay, NY megafab over a quarter ahead of schedule — targeting 40% of DRAM made in the US, at what would be the largest semiconductor site in US history.
Micron and Ford signed a long-term agreement securing memory and storage supply for Ford's next-generation vehicles — days after Micron's GM deal, and one of 16 such agreements the chipmaker disclosed in its third quarter.
Micron broke ground on a ¥1.5T ($9.3B) expansion of its Hiroshima plant to make advanced memory including HBM, with equipment installation from H1 2028 and shipments around summer 2028 — backed by up to ¥500B from Japan's METI.
Micron and General Motors signed a strategic agreement covering LPDRAM, NOR and UFS NAND for future vehicles, with joint work on product definition and qualification. Terms were not disclosed.
Micron forecast strong quarterly results on memory demand and projected a chip shortage extending beyond 2027 — a demand signal, distinct from the day's share move.
Micron selected Bechtel as the EPC contractor for the first phase of its $100B semiconductor megafab in Clay, NY — advancing the project toward vertical construction in 2026, with operations targeted for 2030.
TSMC holds ~two-thirds of the market and the yield lead; Intel is betting its comeback on 18A; Samsung trails on yield. Our read on a race where one player's dominance keeps compounding. (Our opinion, not investment advice.)
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